Physics of Disordered Materials by D. Weaire, F. Wooten (auth.), David Adler, Hellmut

By D. Weaire, F. Wooten (auth.), David Adler, Hellmut Fritzsche, Stanford R. Ovshinsky (eds.)

This quantity and its spouse volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Localization and Metal-Insulator Transitions, are our manner of paying designated tribute to Sir Nevill Mott and to specific our heartfelt needs to him at the get together of his 80th birthday. Sir Nevill has set the top criteria as a physicist, instructor, and clinical chief. Our emotions for him comprise not just the honor and admiration due an exceptional scientist, but in addition a deep affection for a very good individual, who possesses an extraordinary mixture of remarkable own features. We thank him for enriching our lives, and we will perpetually hold adored thoughts of this noble guy. Scientists most sensible exhibit their thank you by means of contributing their suggestions and observations to a Festschrift. This one honoring Sir Nevill fills 3 volumes, with actually enormous quantities of authors assembly a strict time limit. the truth that contributions poured in from all components of the area attests to the foreign harmony of our medical neighborhood. it's a tribute to Sir Nevill's stand for peace and realizing, transcending nationwide borders. The editors desire to exhibit their gratitude to Ghazaleh Koefod for her diligence and services in decoding and typing a number of the papers, in addition to supporting in different alternative ways. The blame for the mistakes that stay belongs to the editors.

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Fritzsche, in Amorphous and Liquid Semiconductors, edited by J. Tauc (Plenum, New York, 1973), p. 221. J. M. Marshall and E. A. Owen, Phil. Mag. 31, 1341 (1975). s. C. Agarwal, Phys. Rev. s. G. Bishop, U. Strom and p~ C. Taylor, Phys. Rev. B 15, 2278 (1977); Phys. Rev. Lett. 34, 1346 (1975). H. P. D. Lanyon, Phy~ Rev. B 130, 134 (1963). P. Nielsen, Phys. Rev. B 6, 37~(1972). M. Abkowitz and R. C. Enck, Phys. Rev. B 25, 2567 (1982). R. A. Street, Adv. Phys. 25, 397 (1976). R. A. Street, T. M. Sear1~ and I.

SchlUter, Phys. Rev. B 26, 2314 (1982). S. Froyen and M. L. Cohen, Phys. Rev. B 29, 3770 (1984~ M. T. Yin and M. L. Cohen, Phys. Rev. B 26, 3259, 5668 (1982). S. Froyen and M. L. Cohen, Phys. Rev. B 28, 3258 (1983). N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, England, 1971). H. Fritzsche, in Amorphous and Liquid Semiconductors, edited by J. Tauc (Plenum, New York, 1973), p. 221. J. M. Marshall and E. A. Owen, Phil. Mag. 31, 1341 (1975). s. C.

They are very good glass formers with T g - 300K to 600K. The most unusual property of these materials, however, is that although the fermi energy is found to be pinned by gap states, no electron spin resonance (ESR) is observed! Moreover, there is no variable range hopping. Furthermore, these materials exhibit a variety of photo-induced phenomena, including an ESR signal, photoluminescence with a large Stokes shift, and below-band-gap absorption. In order to explain these strange phenomena, Anderson 17 postulated a very novel idea.

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