Cambridge Problems in Physics and Advice on Solutions (2nd by P. P. Dendy, R. Tuffnell, C. H. B. Mee

By P. P. Dendy, R. Tuffnell, C. H. B. Mee

A e-book of questions, with labored strategies, from A-level, 6th shape access (Cambridge) and S-level papers.

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When due attention is paid to the correct interpretation of image contrast, TEM results in general agree with the conclusions reached by RHEED [79, 80]. There are several cases where regular facetted structures have Figure 11. 5 ML InAs on InP(001), followed by annealing, showing the final development of symmetrical crosses from the initial chevrons: (a) 3 minute annneal at 450◦ C, (b) 3 minute annneal at 460◦ C, (c) 3 minute annneal at 480◦ C and cooldown at 430◦ C. 20 been reported, but in these there is often confusion between strain and atomic number (Z-dependent) contrast in the images.

Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots. Phys. Rev. B 59: 5678– 5687, 1999. [76] T. Saito, J. N. Schulman and Y. Arakawa. Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tightbinding analysis. Phys. Rev. B 57: 13016–13019, 1998. [77] D. W. Pashley, J. H. Neave and B. A. Joyce. A model for the appearance of chevrons on RHEED patterns from InAs quantum dots. Surf. Sci. 476: 35–42, 2001. [78] T.

72] R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard and J. E. Bowers. 3 µm photoluminescence from InGaAs quantum dots on GaAs. Appl. Phys. Lett. 67: 3795–3797, 1995. [73] W. D. Yang, H. Lee, T. J. Johnson, P. C. Sercel and A. G. Norman. Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets. Phys. Rev. B 61: 2784–2793, 2000. [74] C. Pryor. Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure. Phys. Rev. B 60: 2869–2874, 1999.

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