Applied Physics of Carbon Nanotubes: Fundamentals of Theory, by Slava V. Rotkin, Shekhar Subramoney

By Slava V. Rotkin, Shekhar Subramoney

The booklet describes the cutting-edge in primary, utilized and gadget physics of nanotubes, together with fabrication, manipulation and characterization for machine functions; optics of nanotubes; delivery and electromechanical units and basics of idea for purposes. this knowledge is important to the sector of nanoscience when you consider that nanotubes have the aptitude to turn into a really major digital fabric for many years to return. The booklet will gain all all readers drawn to the applying of nanotubes, both of their theoretical foundations or in newly built characterization instruments which may let functional machine fabrication.

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Extra resources for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices

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This follows from a special symmetry (selection rules, cf. [59] and references therein) applicable to the transitions between the closest subbands of the metallic armchair SWNT’s. It results in the ballistic conductance of armchair M–SWNT’s for the low doping levels. These selection rules are also important for our study and will be considered next. 25). We recall that the pseudospin has the opposite sign, ±1, for states of the valence and conduction band, which are otherwise symmetrical4 with respect to the Fermi level at zero doping/injection: (C) (V ) Em,k,+1 = ζEmkζ = −Em,k,−1 .

For a typical NT NEMS geometry it constitutes 10 % or less, which corroborates post factum our perturbative approach. Also we note that (2) the quantum correction is inversely proportional to the DoS and thus disappears in the classical limit of an infinite DoS of a 3D bulk material. (3) The ratio of the classical capacitance to the quantum capacitance is not geometry (device) independent. 0 0 10 20 30 z, nm 40 Fig. 5. Specific charge density for two devices: (right) string and (left) cantilever NEMS.

This inhomogeneous field is capable of opening a semiconductor gap in the DoS of the armchair and/or quasi–metallic nanotube. The electron flow (at the Fermi level, which has to be in the middle of the forbidden gap in the gated region) is then classically suppressed (at T = 0). A quantum mechanical tunnelling mechanism has to be invoked in the current calculation because the effective mass of the electron in the SWNT is very light. Thus, the rate of tunnelling through the classically forbidden region is high.

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